 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| TN0201T Vishay Siliconix N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) 20 rDS(on) Max (W) 1.0 @ VGS = 10 V 1.4 @ VGS = 4.5 V VGS(th) (V) 1.0 to 3.0 ID (A) 0.39 FEATURES D D D D D Low On-Resistance: 0.75 W Low Threshold: <1.75 V Low Input Capacitance: 65 pF Fast Switching Speed: 15 ns Low Input and Output Leakage BENEFITS D D D D D Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffer High-Speed Circuits Low Error Voltage APPLICATIONS D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Solid-State Relays TO-236 (SOT-23) G 1 3 D Marking Code: N1wll N1 = Part Number Code for TN0201T w = Week Code ll = Lot Traceability S 2 Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) _ Pulsed Drain Currenta Power Dissipation Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range Notes a. Pulse width limited by maximum junction temperature. Document Number: 70200 S-04279--Rev. E, 16-Jul-01 www.vishay.com TA= 25_C TA= 70_C TA= 25_C TA= 70_C Symbol VDS VGS ID IDM PD RthJA TJ, Tstg Limit 20 "20 0.39 0.25 0.75 0.35 0.22 357 -55 to 150 Unit V A W _C/W _C 11-1 TN0201T Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-Resistanceb Forward Transconductanceb Diode Forward Voltage V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS(on) VGS = 10 V, ID = 0.3 A gfs VSD VDS = 10 V, ID = 0.2 A IS = 0.3 A, VGS = 0 V 0.75 450 0.85 1.0 mS V VGS = 0 V, ID = 10 mA VDS = VGS, ID = 0.25 mA VDS = 0 V, VGS = "20 V VDS = 16 V, VGS = 0 V VDS = 14 V, VGS = 0 V, TJ = 55_C VDS = 10 V, VGS = 10 V VGS = 4.5 V, ID = 0.1 A 0.5 0.75 1 1.4 20 1.0 40 1.90 3.0 "100 1 10 mA m A W V nA Symbol Test Conditions Min Typa Max Unit Dynamica Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd Ciss Coss Crss VDS = 15 V, VGS = 0 V, f = 1 MHz VDS = 16 V, VGS = 10 V ID ^ 0.3 A 1400 300 200 65 35 6 pF pC Switchinga, c td(on) Turn-On Time tr td(off) tf Notes a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW v300 ms duty cycle v2%. c. Switching time is essentially independent of operating temperature. VDD = 15 V, RL = 50 W ID ^ 0.3 A, VGEN = 10 V RG = 6 W 5 10 ns 12 6 VNBP02 Turn-Off Time www.vishay.com 11-2 Document Number: 70200 S-04279--Rev. E, 16-Jul-01 TN0201T Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Output Characteristics 0.8 5V 0.7 0.6 ID - Drain Current (A) 0.5 0.4 0.3 3V 0.2 0.1 2V 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.0 0.0 0.5 1.0 1.5 2.0 2.5 VGS = 10, 9, 8, 7, 6 V ID - Drain Current (A) 0.6 4V 0.8 1.0 Transfer Characteristics 0.4 0.2 TJ = 125_C -55_C 25_C 3.0 3.5 4.0 4.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-Source Voltage 2.4 1.5 On-Resistance vs. Drain Current rDS(on) - On-Resistance ( ) rDS(on) - On-Resistance ( ) 2.0 1.2 VGS = 4.5 V 0.9 VGS = 10 V 0.6 1.6 1.2 ID @ 300 mA 0.8 0.4 0.3 0.0 0 4 8 12 16 20 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VGS - Gate-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Junction Temperature 1.65 0.2 Threshold Voltage Variance Over Temperature rDS(on) - On-Resistance ( ) (Normalized) 1.45 VGS(th) - Variance (V) VGS = 10 V @ 300 mA 1.25 VGS = 4.5 V @ 100 mA 0.1 ID = 250 mA -0.0 -0.1 1.05 -0.2 0.85 -0.3 0.65 -50 -25 0 25 50 75 100 125 150 -0.4 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) TJ - Junction Temperature (_C) Document Number: 70200 S-04279--Rev. E, 16-Jul-01 www.vishay.com 11-3 TN0201T Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) 140 120 100 80 Ciss 60 40 20 Crss 0 0 4 8 12 16 20 0 0 500 1000 1500 2000 2500 3000 Coss VGS = 0V S = IMHZ Capacitance 20 VDS = 16 V ID = 300 mA VGS - Gate-to-Source Voltage (V) 15 Gate Charge C - Capacitance (pF) 10 5 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (pC) Source-Drain Diode Forward Voltage 10.0 ID = 250 mA 1.0 IS - Source Current (A) 0.100 TJ = 125_C 0.010 25_C 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD - Source-to-Drain Voltage (V) www.vishay.com 11-4 Document Number: 70200 S-04279--Rev. E, 16-Jul-01 |
Price & Availability of TN0201T
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |